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APTM120H57FTG

1200V (1.2kV)|17A|390W
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MOSFET 4N-CH 1200V 17A SP4

Specifications

Brand
Microsemi
Package
SP4
Packaging
—
Weight
—

Total Inventory

451pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM120H57FTG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type4 N-Channel (H-Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C17A
Rds On (Max) @ Id, Vgs684mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5155pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP4
Supplier Device PackageSP4

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Interface

Datasheet & Documents

aptm120h57ftg.pdf

PDF Document · 6 pages

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