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APTM120DU29TG

1200V (1.2kV)|34A|780W
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MOSFET 2N-CH 1200V 34A SP4

Specifications

Brand
Microsemi
Package
SP4
Packaging
—
Weight
—

Total Inventory

224pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM120DU29TG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C34A
Rds On (Max) @ Id, Vgs348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds10300pF @ 25V
Power - Max780W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP4
Supplier Device PackageSP4

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Datasheet & Documents

aptm120du29tg.pdf

PDF Document · 6 pages

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