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APTM10HM09FT3G

100V|139A|390W
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MOSFET 4N-CH 100V 139A SP3

Specifications

Brand
Microsemi
Package
SP3
Packaging
—
Weight
—

Total Inventory

366pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM10HM09FT3G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type4 N-Channel (H-Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C139A
Rds On (Max) @ Id, Vgs10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds9875pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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