Heisener Electronics
BOM

APTM10AM02FG

100V|495A|1250W
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MOSFET 2N-CH 100V 495A SP6

Specifications

Brand
Microsemi
Package
SP6
Packaging
—
Weight
—

Total Inventory

224pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM10AM02FG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C495A
Rds On (Max) @ Id, Vgs2.5mOhm @ 200A, 10V
Vgs(th) (Max) @ Id4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds40000pF @ 25V
Power - Max1250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6

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