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1000V (1kV)|19A|357W
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MOSFET 4N-CH 1000V 19A SP3
Specifications
- Brand
- Microsemi
- Package
- SP3
- Packaging
- —
- Weight
- —
Total Inventory
178pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APTM100H46FT3G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 8™ | |
| FET Type | 4 N-Channel (H-Bridge) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 19A | |
| Rds On (Max) @ Id, Vgs | 552mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V | |
| Power - Max | 357W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Supplier Device Package | SP3 |
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