Contact
Send MessageAPTM100DA40T1G
1000V|20A (Tc)|357W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
MOSFET N-CH 1000V 20A SP1
Specifications
- Brand
- Microsemi
- Package
- SP1
- Packaging
- —
- Weight
- —
Total Inventory
284pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APTM100DA40T1G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 357W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Supplier Device Package | SP1 | |
| Package / Case | SP1 |
Recommended Products
RES SMD 3.6K OHM 0.5% 1/16W 0603
IMS-5 100 5% RJ4
CAP FILM 1UF 10% 630VDC RADIAL
CAP CER 4700PF 1.2KV X7R 2220
SENSOR OPT 560NM AMBIENT 0805
RELAY GEN PURPOSE DPDT 30A 48V
CIR BRKR MAG-HYDR 80A 65VDC
MOSFET N-CH 600V 1.9A DPAK
PGA SOLDER TAIL
CONN EDGE DUAL FMALE 130POS .100
Datasheet & Documents
aptm100da40t1g.pdf
PDF Document · 5 pages
