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APTM100DA18CT1G

1000V|40A (Tc)|657W (Tc)
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MOSFET N-CH 1000V 40A SP1

Specifications

Brand
Microsemi
Package
SP1
Packaging
—
Weight
—

Total Inventory

488pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM100DA18CT1G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs216mOhm @ 33A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs570nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds14800pF @ 25V
FET Feature-
Power Dissipation (Max)657W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

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