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APTM100A40FT1G

1000V (1kV)|21A|390W
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MOSFET 2N-CH 1000V 21A SP1

Specifications

Brand
Microsemi
Package
SP1
Packaging
—
Weight
—

Total Inventory

438pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM100A40FT1G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C21A
Rds On (Max) @ Id, Vgs480mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs305nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds7868pF @ 25V
Power - Max390W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP1
Supplier Device PackageSP1

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