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1000V (1kV)|36A|694W
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MOSFET 2N-CH 1000V 36A SP4
Specifications
- Brand
- Microsemi
- Package
- SP4
- Packaging
- —
- Weight
- —
Total Inventory
382pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APTM100A23SCTG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 36A | |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 18A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 308nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V | |
| Power - Max | 694W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP4 | |
| Supplier Device Package | SP4 |
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Datasheet & Documents
aptm100a23sctg.pdf
PDF Document · 7 pages
