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APTM100A12STG

1000V (1kV)|68A|1250W
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MOSFET 2N-CH 1000V 68A LP8W

Specifications

Brand
Microsemi
Package
SP3
Packaging
—
Weight
—

Total Inventory

197pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM100A12STG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25°C68A
Rds On (Max) @ Id, Vgs120mOhm @ 34A, 10V
Vgs(th) (Max) @ Id5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs616nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds17400pF @ 25V
Power - Max1250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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Datasheet & Documents

aptm100a12stg.pdf

PDF Document · 6 pages

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