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1700V|45A|210W
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IGBT 1700V 45A 210W D1
Specifications
- Brand
- Microsemi
- Package
- D1
- Packaging
- —
- Weight
- —
Total Inventory
131pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APTGT30DA170D1G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Configuration | Single | |
| Voltage - Collector Emitter Breakdown (Max) | 1700V | |
| Current - Collector (Ic) (Max) | 45A | |
| Power - Max | 210W | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A | |
| Current - Collector Cutoff (Max) | 3mA | |
| Input Capacitance (Cies) @ Vce | 2.5nF @ 25V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | D1 | |
| Supplier Device Package | D1 |
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Datasheet & Documents
aptgt30da170d1g.pdf
PDF Document · 5 pages
