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APTGF50DH60T1G

600V|65A|250W
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IGBT NPT BRIDGE 600V 65A SP1

Specifications

Brand
Microsemi
Package
SP1
Packaging
—
Weight
—

Total Inventory

156pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTGF50DH60T1G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT
ConfigurationAsymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)65A
Power - Max250W
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 50A
Current - Collector Cutoff (Max)250µA
Input Capacitance (Cies) @ Vce2.2nF @ 25V
InputStandard
NTC ThermistorYes
Operating Temperature-
Mounting TypeChassis Mount
Package / CaseSP1
Supplier Device PackageSP1

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Datasheet & Documents

aptgf50dh60t1g.pdf

PDF Document · 8 pages

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