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APTC90H12T2G

900V|30A|250W
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MOSFET 4N-CH 900V 30A SP2

Specifications

Brand
Microsemi
Package
SP2
Packaging
—
Weight
—

Total Inventory

250pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTC90H12T2G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
SeriesCoolMOS™
FET Type4 N-Channel (H-Bridge)
FET FeatureSuper Junction
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C30A
Rds On (Max) @ Id, Vgs120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 100V
Power - Max250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP2
Supplier Device PackageSP2

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Datasheet & Documents

aptc90h12t2g.pdf

PDF Document · 6 pages

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