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APTC90DAM60T1G

900V|59A (Tc)|462W (Tc)
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MOSFET N-CH 900V 59A SP1

Specifications

Brand
Microsemi
Package
SP1
Packaging
—
Weight
—

Total Inventory

342pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTC90DAM60T1G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs540nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13600pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)462W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

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