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APTC60HM70BT3G

600V|39A|250W
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MOSFET 4N-CH 600V 39A SP3

Specifications

Brand
Microsemi
Package
SP3
Packaging
—
Weight
—

Total Inventory

332pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTC60HM70BT3G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
SeriesCoolMOS™
FET Type4 N-Channel (H-Bridge)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C39A
Rds On (Max) @ Id, Vgs70mOhm @ 39A, 10V
Vgs(th) (Max) @ Id3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
Power - Max250W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP3
Supplier Device PackageSP3

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