Heisener Electronics
BOM

APT94N65B2C6

650V|95A (Tc)|833W (Tc)
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MOSFET N-CH 650V 95A T-MAX

Specifications

Brand
Microsemi
Package
T-MAX™ [B2]
Packaging
—
Weight
—

Total Inventory

271pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT94N65B2C6 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs35mOhm @ 35.2A, 10V
Vgs(th) (Max) @ Id3.5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs320nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8140pF @ 25V
FET FeatureSuper Junction
Power Dissipation (Max)833W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant

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