Heisener Electronics
BOM

APT8020B2LLG

800V|38A (Tc)|694W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 800V 38A T-MAX

Specifications

Brand
Microsemi
Package
T-MAX™ [B2]
Packaging
—
Weight
—

Total Inventory

386pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT8020B2LLG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs200mOhm @ 19A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 25V
FET Feature-
Power Dissipation (Max)694W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant

Recommended Products

767163331GPTR13

767163331GPTR13

RES ARRAY 8 RES 330 OHM 16SOIC

FA-20H-38-4000MF11L-AJ3

FA-20H-38-4000MF11L-AJ3

CRYSTAL 38.4000MHZ 8PF SMD

BFC246965223

BFC246965223

CAP FILM 0.022UF 10% 630VDC RAD

VJ0402Y473JXQPW1BC

VJ0402Y473JXQPW1BC

CAP CER 0.047UF 10V X7R 0402

EEE-HAE100WAR

EEE-HAE100WAR

CAP ALUM 10UF 20% 25V SMD

MT45W4MW16BFB-708-WT

MT45W4MW16BFB-708-WT

IC PSRAM 64M PARALLEL 54VFBGA

J109-126

J109-126

JFET N-CH 25V 0.4W SOT54

S-817A55APF-CVSTFG

S-817A55APF-CVSTFG

IC REG LINEAR 5.5V 75MA SNT4A

RMM15DSEN

RMM15DSEN

CONN EDGE DUAL FMALE 30POS 0.156

TSM060NB06LCZ

TSM060NB06LCZ

60V, 111A, SINGLE N-CHANNEL POWE