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Send MessageAPT70GR65B2SCD30
650V|134A|595W
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INSULATED GATE BIPOLAR TRANSISTO
Specifications
- Brand
- Microsemi
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
267pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT70GR65B2SCD30 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | * | |
| IGBT Type | NPT | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 134A | |
| Current - Collector Pulsed (Icm) | 260A | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A | |
| Power - Max | 595W | |
| Switching Energy | - | |
| Input Type | - | |
| Gate Charge | 305nC | |
| Td (on/off) @ 25°C | 19ns/170ns | |
| Test Condition | 433V, 70A, 4.3Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | T-MAX™ [B2] |
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