Heisener Electronics
BOM

APT70GR65B2DU40

650V|134A|595W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

INSULATED GATE BIPOLAR TRANSISTO

Specifications

Brand
Microsemi
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

300pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT70GR65B2DU40 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)134A
Current - Collector Pulsed (Icm)280A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 70A
Power - Max595W
Switching Energy-
Input TypeStandard
Gate Charge305nC
Td (on/off) @ 25°C18ns/170ns
Test Condition433V, 70A, 4.3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageT-MAX™ [B2]

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