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600V|121A|520W
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IGBT 600V 121A 520W TO-247
Specifications
- Brand
- Microsemi
- Package
- TO-247-3 Variant
- Packaging
- —
- Weight
- —
Total Inventory
405pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT68GA60B2D40 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 8™ | |
| IGBT Type | PT | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Current - Collector (Ic) (Max) | 121A | |
| Current - Collector Pulsed (Icm) | 202A | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A | |
| Power - Max | 520W | |
| Switching Energy | 715µJ (on), 607µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 198nC | |
| Td (on/off) @ 25°C | 21ns/133ns | |
| Test Condition | 400V, 40A, 4.7Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant | |
| Supplier Device Package | - |
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