Heisener Electronics
BOM

APT66M60B2

600V|70A (Tc)|1135W (Tc)
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MOSFET N-CH 600V 66A T-MAX

Specifications

Brand
Microsemi
Package
T-MAX™ [B2]
Packaging
—
Weight
—

Total Inventory

477pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT66M60B2 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 33A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs330nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13190pF @ 25V
FET Feature-
Power Dissipation (Max)1135W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant

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