Heisener Electronics
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APT65GP60L2DQ2G

600V|198A|833W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

IGBT 600V 198A 833W TO264

Specifications

Brand
Microsemi
Package
TO-264-3, TO-264AA
Packaging
—
Weight
—

Total Inventory

491pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT65GP60L2DQ2G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)198A
Current - Collector Pulsed (Icm)250A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 65A
Power - Max833W
Switching Energy605µJ (on), 895µJ (off)
Input TypeStandard
Gate Charge210nC
Td (on/off) @ 25°C30ns/90ns
Test Condition400V, 65A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device Package-

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