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APT6030BN

600V|23A (Tc)|360W (Tc)
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MOSFET N-CH 600V 23A TO247AD

Specifications

Brand
Microsemi
Package
TO-247AD
Packaging
—
Weight
—

Total Inventory

203pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT6030BN from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS IV®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs210nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
FET Feature-
Power Dissipation (Max)360W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-247-3

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Datasheet & Documents

apt6030bn.pdf

PDF Document · 4 pages

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