Heisener Electronics
BOM

APT50M80B2VRG

500V|58A (Tc)|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 500V 58A T-MAX

Specifications

Brand
Microsemi
Package
T-MAX™ [B2]
Packaging
—
Weight
—

Total Inventory

143pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT50M80B2VRG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS V®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 29A, 10V
Vgs(th) (Max) @ Id4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs423nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds8797pF @ 25V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant

Recommended Products

PE2010JKF7W0R047L

PE2010JKF7W0R047L

RES 0.047 OHM 5% 1W 2010

RN73H1ETTP10R0D50

RN73H1ETTP10R0D50

RES THIN FILM SMD

MMP100FRF18R7

MMP100FRF18R7

RES SMD 1% 1W MELF

SIT9005AIE2H-18DC

SIT9005AIE2H-18DC

MEMS OSC PRG SSXO LVCMOS CS 1.8V

C1812X333F3JACAUTO

C1812X333F3JACAUTO

CAP CER 0.033UF 25V U2J 1812

HEDS-5500-I01

HEDS-5500-I01

ROTARY ENCODER OPTICAL 512PPR

VE-B6N-EW-F1

VE-B6N-EW-F1

DC DC CONVERTER 18.5V 100W

INA302A1QPWRQ1

INA302A1QPWRQ1

LINEAR OPERATIONAL (OP) AMP

DL64R24-61PN-6106

DL64R24-61PN-6106

CONN RCPT 61POS JAM NUT W/PINS

ACC43DRMD-S288

ACC43DRMD-S288

CONN EDGE DUAL FMALE 86POS 0.100