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600V|150A|625W
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IGBT 600V 150A 625W TMAX
Specifications
- Brand
- Microsemi
- Package
- TO-247-3 Variant
- Packaging
- —
- Weight
- —
Total Inventory
346pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT50GP60B2DQ2G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
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Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 7® | |
| IGBT Type | PT | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Current - Collector (Ic) (Max) | 150A | |
| Current - Collector Pulsed (Icm) | 190A | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 50A | |
| Power - Max | 625W | |
| Switching Energy | 465µJ (on), 635µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 165nC | |
| Td (on/off) @ 25°C | 19ns/85ns | |
| Test Condition | 400V, 50A, 4.3Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant | |
| Supplier Device Package | - |
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