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650V|118A|543W
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INSULATED GATE BIPOLAR TRANSISTO
Specifications
- Brand
- Microsemi
- Package
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Packaging
- —
- Weight
- —
Total Inventory
468pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT45GR65SSCD10 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| IGBT Type | NPT | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | 118A | |
| Current - Collector Pulsed (Icm) | 224A | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A | |
| Power - Max | 543W | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | 203nC | |
| Td (on/off) @ 25°C | 15ns/100ns | |
| Test Condition | 433V, 45A, 4.3Ohm, 15V | |
| Reverse Recovery Time (trr) | 80ns | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | D3Pak |
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