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1200V|113A|625W
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IGBT 1200V 113A 625W TMAX
Specifications
- Brand
- Microsemi
- Package
- TO-247-3 Variant
- Packaging
- —
- Weight
- —
Total Inventory
479pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT45GP120B2DQ2G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 7® | |
| IGBT Type | PT | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | 113A | |
| Current - Collector Pulsed (Icm) | 170A | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 45A | |
| Power - Max | 625W | |
| Switching Energy | 900µJ (on), 905µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 185nC | |
| Td (on/off) @ 25°C | 18ns/100ns | |
| Test Condition | 600V, 45A, 5Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant | |
| Supplier Device Package | - |
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