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1000V|35A (Tc)|1135W (Tc)
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MOSFET N-CH 1000V 35A T-MAX
Specifications
- Brand
- Microsemi
- Package
- T-MAX™ [B2]
- Packaging
- —
- Weight
- —
Total Inventory
332pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT34F100B2 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 8™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 18A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) (Max) @ Vgs | 305nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9835pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1135W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | T-MAX™ [B2] | |
| Package / Case | TO-247-3 Variant |
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