Heisener Electronics
BOM

APT23F60B

600V|24A (Tc)|415W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 23A TO-247

Specifications

Brand
Microsemi
Package
TO-247 [B]
Packaging
—
Weight
—

Total Inventory

459pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APT23F60B from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
SeriesPOWER MOS 8™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4415pF @ 25V
FET Feature-
Power Dissipation (Max)415W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
Package / CaseTO-247-3

Recommended Products

1210J5000682MDT

1210J5000682MDT

CAP CER 6800PF 500V X7R 1210

VI-23T-IW-F3

VI-23T-IW-F3

DC DC CONVERTER 6.5V 100W

VI-BTX-IV

VI-BTX-IV

DC DC CONVERTER 5.2V 150W

VOT8025AG-V

VOT8025AG-V

OPTOCPLR PHOTOTRIAC 800V DIP5 GW

PS8AES01WEX

PS8AES01WEX

IC CTLR HOME APPLIANCE

VS-VSKV56-06

VS-VSKV56-06

MODULE THYRISTOR 60A ADD-A-PAK

SIR404DP-T1-GE3

SIR404DP-T1-GE3

MOSFET N-CH 20V 60A PPAK SO-8

15-24-3000

15-24-3000

CONN IDT FEMLE YELLOW .200 AWG16

KJB7T11F98HA

KJB7T11F98HA

CONN RCPT 6POS JAM NUT PIN

JBB40DYRN-S1355

JBB40DYRN-S1355

CONN EDGE DUAL FMALE 80POS 0.050