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1200 V|9A (Tc)|300W (Tc)
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MOSFET N-CH 1200V 9A TO247
Specifications
- Brand
- Microchip Technology
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT1201R4BLLG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | POWER MOS 7® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
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