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APT102GA60B2

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付款方式:

Part Number

APT102GA60B2

Manufacturer

Microsemi

Description

IGBT 600V 183A 780W TO247

Lifecycle

Obsolete

RoHS

No RoHS Information

EDA/CAD Models

APT102GA60B2 PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:397 pcs

运送服务:

APT102GA60B2 规格

Manufacturer
Microsemi Corporation
Series
POWER MOS 8™
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
183A
Current - Collector Pulsed (Icm)
307A
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 62A
Power - Max
780W
Switching Energy
1.354mJ (on), 1.614mJ (off)
Input Type
Standard
Gate Charge
294nC
Td (on/off) @ 25°C
28ns/212ns
Test Condition
400V, 62A, 4.7Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Supplier Device Package
-

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全球供应链 – 可靠且授权的分销商资源

零件编号:制造商描述库存
APT102GA60B2Microsemi CorporationINSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 8 - SINGLE - Rail/TubeContact Us
APT102GA60B2Microchip Technology IncIGBT 600V 183A 780W TO247Limited Supply - Call
APT102GA60B2Microchip Technology Inc0
APT102GA60B2Microchip Technology IncIGBT PT MOS 8 Single 600 V 102 A TO-247 MAXTemporarily Out of Stock – Alternates Available
APT102GA60B2Microchip Technology IncFG, IGBT, 600V, TO-247 T-MAX0 in Stock 0 on Order
APT102GA60B2Microchip Technology IncFG, IGBT, 600V, TO-247 T-MAX0
APT102GA60B2Microchip Technology IncIGBT PT MOS 8 Single 600 V 102 A TO-247 MAX T-MAX Tube RoHS Compliant: Yes0
APT102GA60B2Microsemi CorporationOEM/CM ONLY7467

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