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Send MessageAPT102GA60B2
600V|183A|780W
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IGBT 600V 183A 780W TO247
Specifications
- Brand
- Microsemi
- Package
- TO-247-3 Variant
- Packaging
- —
- Weight
- —
Total Inventory
397pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT102GA60B2 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS 8™ | |
| IGBT Type | PT | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Current - Collector (Ic) (Max) | 183A | |
| Current - Collector Pulsed (Icm) | 307A | |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 62A | |
| Power - Max | 780W | |
| Switching Energy | 1.354mJ (on), 1.614mJ (off) | |
| Input Type | Standard | |
| Gate Charge | 294nC | |
| Td (on/off) @ 25°C | 28ns/212ns | |
| Test Condition | 400V, 62A, 4.7Ohm, 15V | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant | |
| Supplier Device Package | - |
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