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1000V|10.5A (Tc)|310W (Tc)
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MOSFET N-CH 1000V 10.5A TO247AD
Specifications
- Brand
- Microsemi
- Package
- TO-247AD
- Packaging
- —
- Weight
- —
Total Inventory
360pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT1001R1BN from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS IV® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000V | |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5.25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 310W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247AD | |
| Package / Case | TO-247-3 |
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Datasheet & Documents
apt1001r1bn.pdf
PDF Document · 4 pages
