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AOU3N50_1

500V|2.8A (Tc)|57W (Tc)
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MOSFET N-CH 500V 2.8A IPAK

Specifications

Brand
Alpha & Omega Semiconductor
Package
TO-251-3
Packaging
—
Weight
—

Total Inventory

4,587pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how AOU3N50_1 from Alpha & Omega Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds331pF @ 25V
FET Feature-
Power Dissipation (Max)57W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Datasheet & Documents

aou3n50.pdf

PDF Document · 6 pages

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