Heisener Electronics
BOM

AOTF66920L

100 V|22.5A (Ta), 41A (Tc)|8.3W (Ta), 27.5W (Tc)
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MOSFET N-CH 100V 22.5/41A TO220F

Specifications

Brand
Alpha & Omega Semiconductor Inc.
Package
TO-220F
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how AOTF66920L from Alpha & Omega Semiconductor Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
SeriesAlphaSGT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C22.5A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 27.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack

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Datasheet & Documents

aotf66920l.pdf

PDF Document · 6 pages

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