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AOTF11S65L

650V|11A (Tc)|31W (Tc)
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MOSFET N-CH 650V 11A TO220F

Specifications

Brand
Alpha & Omega Semiconductor Inc.
Package
TO-220-3F
Packaging
—
Weight
—

Total Inventory

6,816pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how AOTF11S65L from Alpha & Omega Semiconductor Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
SeriesaMOS?
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs399 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds646pF @ 100V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3F
Package / CaseTO-220-3 Full Pack

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Datasheet & Documents

aotf11s65l.pdf

PDF Document · 7 pages

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