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700 V|1.7A (Ta), 9.6A (Tc)|4.1W (Ta), 138W (Tc)
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MOSFET N-CH 700V 1.7A/9.6A 8DFN
Specifications
- Brand
- Alpha & Omega Semiconductor Inc.
- Package
- 8-DFN-EP (5x6)
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how AONS660A70F from Alpha & Omega Semiconductor Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Alpha & Omega Semiconductor Inc. | |
| Series | aMOS5™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 700 V | |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta), 9.6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 4.1W (Ta), 138W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-DFN-EP (5x6) | |
| Package / Case | 8-PowerVDFN |
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