Heisener Electronics
BOM

AONR36368

30 V|23A (Ta), 32A (Tc)|4.1W (Ta), 24W (Tc)
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MOSFET N-CH 30V 23A/32A 8DFN

Specifications

Brand
Alpha & Omega Semiconductor Inc.
Package
8-DFN-EP (3x3)
Packaging
—
Weight
—

Total Inventory

12,474pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how AONR36368 from Alpha & Omega Semiconductor Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1305 pF @ 15 V
FET Feature-
Power Dissipation (Max)4.1W (Ta), 24W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN-EP (3x3)
Package / Case8-PowerVDFN

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