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650 V|96A (Tc)|312W (Tj)
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650V SILICON CARBIDE MOSFET
Specifications
- Brand
- Alpha & Omega Semiconductor Inc.
- Package
- TO-247-4L
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how AOM015V65X2 from Alpha & Omega Semiconductor Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Alpha & Omega Semiconductor Inc. | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 24A, 15V | |
| Vgs(th) (Max) @ Id | 3.5V @ 24mA | |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 15 V | |
| Vgs (Max) | +15V, -5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4880 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 312W (Tj) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4L | |
| Package / Case | TO-247-4 |
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