Heisener Electronics
BOM

AOD1N60M

600 V|1.3A (Tc)|45W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET

Specifications

Brand
Alpha & Omega Semiconductor Inc.
Package
TO-252 (DPAK)
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how AOD1N60M from Alpha & Omega Semiconductor Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 650mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 25 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

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