Heisener Electronics
BOM

AOB66916L

100 V|35.5A (Ta), 120A (Tc)|8.3W (Ta), 277W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 100V 35.5/120A TO263

Specifications

Brand
Alpha & Omega Semiconductor Inc.
Package
TO-263 (D2PAK)
Packaging
—
Weight
—

Total Inventory

7,920pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how AOB66916L from Alpha & Omega Semiconductor Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
SeriesAlphaSGT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35.5A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6180 pF @ 50 V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 277W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2PAK)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Datasheet & Documents

aob66916l.pdf

PDF Document · 6 pages

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