Heisener Electronics
BOM

ALD212908APAL

10.6V|80mA|500mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 10.6V 0.08A 8DIP

Specifications

Brand
Advanced Linear Devices Inc.
Package
8-DIP (0.300", 7.62mm)
Packaging
—
Weight
—

Total Inventory

320pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ALD212908APAL from Advanced Linear Devices Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerAdvanced Linear Devices Inc.
SeriesEPAD®, Zero Threshold™
FET Type2 N-Channel (Dual) Matched Pair
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)10.6V
Current - Continuous Drain (Id) @ 25°C80mA
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max500mW
Operating Temperature0°C ~ 70°C (TJ)
Mounting TypeThrough Hole
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-PDIP

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Datasheet & Documents

ald212908apal.pdf

PDF Document · 12 pages

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