ALD114913PAL
10.6V|12mA, 3mA|500mW
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET 2N-CH 10.6V 8DIP
规格参数
- 品牌
- Advanced Linear Devices Inc.
- 封装
- 8-DIP (0.300", 7.62mm)
- 包装方式
- —
库存总量
164个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Advanced Linear Devices Inc. 的 ALD114913PAL 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Advanced Linear Devices Inc. | |
| Series | EPAD® | |
| FET Type | 2 N-Channel (Dual) Matched Pair | |
| FET Feature | Depletion Mode | |
| Drain to Source Voltage (Vdss) | 10.6V | |
| Current - Continuous Drain (Id) @ 25°C | 12mA, 3mA | |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 2.7V | |
| Vgs(th) (Max) @ Id | 1.26V @ 1µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V | |
| Power - Max | 500mW | |
| Operating Temperature | 0°C ~ 70°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 8-DIP (0.300", 7.62mm) | |
| Supplier Device Package | 8-PDIP |
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数据手册与文档
ald114813pcl.pdf
PDF文档 · 12 pages
