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10.6V|-|500mW
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MOSFET 2N-CH 10.6V 8DIP
Specifications
- Brand
- Advanced Linear Devices Inc.
- Package
- 8-DIP (0.300", 7.62mm)
- Packaging
- —
- Weight
- —
Total Inventory
494pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how ALD111933PAL from Advanced Linear Devices Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Advanced Linear Devices Inc. | |
| Series | EPAD® | |
| FET Type | 2 N-Channel (Dual) Matched Pair | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 10.6V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 5.9V | |
| Vgs(th) (Max) @ Id | 3.35V @ 1µA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 2.5pF @ 5V | |
| Power - Max | 500mW | |
| Operating Temperature | 0°C ~ 70°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 8-DIP (0.300", 7.62mm) | |
| Supplier Device Package | 8-PDIP |
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Datasheet & Documents
ald111933mal.pdf
PDF Document · 10 pages
