Contact
Send Message70V658S10BC
3.15V ~ 3.45V
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
IC SRAM 2M PARALLEL 256CABGA
Specifications
- Brand
- IDT, Integrated Device Technology
- Package
- 256-LBGA
- Packaging
- —
- Weight
- —
Total Inventory
232pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 70V658S10BC from IDT, Integrated Device Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IDT, Integrated Device Technology Inc | |
| Series | - | |
| Memory Type | Volatile | |
| Memory Format | SRAM | |
| Technology | SRAM - Dual Port, Asynchronous | |
| Memory Size | 2Mb (64K x 36) | |
| Memory Interface | Parallel | |
| Clock Frequency | - | |
| Write Cycle Time - Word, Page | 10ns | |
| Access Time | 10ns | |
| Voltage - Supply | 3.15V ~ 3.45V | |
| Operating Temperature | 0°C ~ 70°C (TA) | |
| Mounting Type | Surface Mount | |
| Package / Case | 256-LBGA | |
| Supplier Device Package | 256-CABGA (17x17) |
Recommended Products
RES 0.1 OHM 5W 5% RADIAL
RES MF 2W 5% AXIAL
RES SMD 162 OHM 0.05% 1/16W 0402
CAP CER 3.3PF 200V C0G/NP0 0603
CAP CER 2.2UF 25V Y5U 1206
PRESSURE SENSOR AER 0.025 C41/1
TRANS PREBIAS NPN 254MW SOT1123
DIODE ZENER 28V 500MW SOD123
DIODE GEN PURP 100V 3A D5B
SAFETY POWER MANAGEMENT IC, QFN5
