Heisener Electronics
BOM

6N139-F

2500Vrms|500% @ 1.6mA
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

OPTOISO 2.5KV DARL W/BASE 8DIP

Specifications

Brand
Toshiba Semiconductor and Storage
Package
8-DIP (0.300", 7.62mm)
Packaging
—
Weight
—

Total Inventory

439pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 6N139-F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Number of Channels1
Voltage - Isolation2500Vrms
Current Transfer Ratio (Min)500% @ 1.6mA
Current Transfer Ratio (Max)-
Turn On / Turn Off Time (Typ)200ns, 1µs
Rise / Fall Time (Typ)-
Input TypeDC
Output TypeDarlington with Base
Voltage - Output (Max)18V
Current - Output / Channel60mA
Voltage - Forward (Vf) (Typ)1.65V
Current - DC Forward (If) (Max)20mA
Vce Saturation (Max)-
Operating Temperature0°C ~ 70°C
Mounting TypeThrough Hole
Package / Case8-DIP (0.300", 7.62mm)
Supplier Device Package8-DIP

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