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3LP01M-TL-E

30V|100mA (Ta)|150mW (Ta)
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MOSFET P-CH 30V 0.1A

Specifications

Brand
ON Semiconductor
Package
3-MCP
Packaging
—
Weight
—

Total Inventory

325pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 3LP01M-TL-E from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Rds On (Max) @ Id, Vgs10.4Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs1.43nC @ 10V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds7.5pF @ 10V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-MCP
Package / CaseSC-70, SOT-323

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Datasheet & Documents

3lp01m-tl-h.pdf

PDF Document · 6 pages

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Datasheet Preview

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