Heisener Electronics
BOM

31DF6-B0G_1

600V|3A
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 600V 3A DO201AD

Specifications

Brand
Taiwan Semiconductor Corporation
Package
DO-201AD, Axial
Packaging
—
Weight
—

Total Inventory

381pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how 31DF6-B0G_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.7V @ 3A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35ns
Current - Reverse Leakage @ Vr20µA @ 600V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseDO-201AD, Axial
Supplier Device PackageDO-201AD
Operating Temperature - Junction-40°C ~ 150°C

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