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900 V|5A (Ta)|150W (Tc)
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MOSFET N-CH 900V 5A TO3P
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-3P(N)
- Packaging
- —
- Weight
- —
Total Inventory
57pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2SK3700(F) from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 900 V | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(N) | |
| Package / Case | TO-3P-3, SC-65-3 |
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