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250V|30A (Ta)|150W (Tc)
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MOSFET N-CH 250V 30A TO-3PN
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-3P(N)
- Packaging
- —
- Weight
- —
Total Inventory
408pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2SK2967-F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 132nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150W (Tc) | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P(N) | |
| Package / Case | TO-3P-3, SC-65-3 |
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Datasheet & Documents
2sk2967-f.pdf
PDF Document · 6 pages
