2SJ438-Q-M
-|-|-
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET P-CH
规格参数
- 品牌
- Toshiba Semiconductor and Storage
- 封装
- TO-220NIS
- 包装方式
- —
库存总量
348个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Toshiba Semiconductor and Storage 的 2SJ438-Q-M 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | * | |
| FET Type | - | |
| Technology | - | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220NIS | |
| Package / Case | TO-220-3 Full Pack |
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数据手册与文档
2sj438-q-m.pdf
PDF文档 · 6 pages
