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MOSFET P-CH
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- TO-220NIS
- Packaging
- —
- Weight
- —
Total Inventory
348pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2SJ438-Q-M from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | * | |
| FET Type | - | |
| Technology | - | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220NIS | |
| Package / Case | TO-220-3 Full Pack |
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Datasheet & Documents
2sj438-q-m.pdf
PDF Document · 6 pages
